Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-1x-fm Dramatically improve performance and handle

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (2x 16GB) DDR4 2133 MT/s 288-pin RDIMM RAM kit from Crucial

2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility

2xM368L3223DTL-CB0 Capacity 512MB (2x 256MB) Brand Samsung Speed DDR-266 - 266MT/s - PC2100 Voltage 2

2xM368L2923DUN-CCC Capacity 2GB (2x 1GB) Brand Samsung Speed DDR-400 - 400MT/s - PC3200 Voltage 2

This 8GB (1x 8GB) DDR3 1066 MT/s Dual rank

Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-1x-fm Dramatically improve performance and handleProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.